The MicroElec extension for microelectronics applications

The Geant4-MicroElec 1 extension [Inc], developed by CEA, aims at modeling the effect of ionizing radiation in highly integrated microelectronic components. It describes the transport and generation of very low energy electrons by incident electrons, protons and heavy ions in silicon.

All Geant4-MicroElec physics processes and models simulate step-by-step interactions of particles in silicon down to the eV scale; they are pure discrete processes. Table 36 summarizes the list of physical interactions per particle type that can be modeled using the Geant4-MicroElec extension, along with the corresponding process classes, model classes, low energy limit applicability of models, high energy applicability of models and energy threshold below which the incident particle is killed (stopped and the kinetic energy is locally deposited, because of the low energy limit applicability of the inelastic model). All models are interpolated. For now, they are valid for silicon only (use the G4_Si Geant4-NIST material).

Table 36 List of G4MicroElec physical interactions
Particle	Interaction	Process	Model	Range	Kill
Electron	Elastic scattering	G4MicroElastic	G4MicroElecElasticModel	5 eV–100 MeV	16.7 eV
Electron	Ionisation	G4MicroElecInelastic	G4MicroElecInelasticModel	16.7 eV–100 MeV	–
Protons, ions	Ionisation	G4MicroElecInelastic	G4MicroElecInelasticModel	50 keV/u–10 MeV/u	–

All details regarding the physics and formula used for these processes and models and available in [AV12] for incident electrons and in [AVP12] for incident protons and heavy ions.

Bibliography

AV12: J.-E. Sauvestre et al. A. Valentin, M. Raine. Geant4 physics processes for microdosimetry simulation: very low energy electromagnetic models for electrons in silicon. Nucl. Instr. and Meth. in Phys. Research B, 288():66–73, 2012.
AVP12: M. Gaillardin A. Valentin, M. Raine and P. Paillet. Geant4 physics processes for microdosimetry simulation: very low energy electromagnetic models for protons and heavy ions in silicon. Nucl. Instr. and Meth. in Phys. Research B, 287():124–129, 2012.
Inc: S. Incerti. Geant4-microelec online available at:. Technical Report. URL: http://geant4.web.cern.ch/node/1623.

1: Previously called MuElec.